The DMN6068LK3 is a high-performance N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is engineered to deliver efficient power control and conversion in a variety of applications.

Key Features

• Low On-Resistance: The DMN6068LK3 boasts an incredibly low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power losses during operation.
• High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant current, making it suitable for demanding power applications.
• High Voltage Capability: It has a high drain-source voltage (V<sub>DS) rating, allowing it to withstand higher voltages without breakdown, which is critical for high-voltage circuits.
• Low Gate Charge: The device features a low total gate charge (Q<sub>g), which reduces the power required to switch the transistor, thereby improving the overall efficiency of the system.
• Fast Switching Speed: Fast switching capabilities enable the DMN6068LK3 to operate efficiently at higher frequencies, which is advantageous for power supplies and other high-speed switching applications.

Applications

• Power Management
• DC-DC Converters
• Motor Drives
• Battery Management Systems
• Load Switches

Product Specifications

Parameter Value R<sub>DS(on) Typically 6.5mΩ at V<sub>GS = 10V I<sub>D 60A V<sub>DS 68V Q<sub>g Typically 31nC

The DMN6068LK3 from Diodes Incorporated is packaged in a robust, environmentally friendly, lead-free DPAK (TO-252) package, which is suitable for commercial-grade applications. Its combination of high efficiency, reliability, and thermal performance makes it an excellent choice for designers looking to optimize their power systems.