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DMNH10H028SPS-13

Part No DMNH10H028SPS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 40A PWRDI5060-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 100 V 40A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package 8-PowerTDFN
Case / Package PowerDI5060-8
Family Name DMNH10
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMNH10H028SPS-13DITR, DMNH10H028SPS-13DICT, DMNH10H028SPS-13DIDKR
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869040-DMNH10H028SPS-13
Ultra Librarian 3D Model Ultra Librarian DMNH10H028SPS-13 CAD Model

Description

Introducing the DMNH10H028SPS-13 MOSFET from Diodes Incorporated

The DMNH10H028SPS-13 is a state-of-the-art N-Channel enhancement mode Power MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is designed to meet the high-efficiency and reliability standards required by modern power management applications.

With its advanced technology, the DMNH10H028SPS-13 provides exceptional performance characteristics that are ideal for a wide range of applications, including power supplies, DC-DC converters, motor drives, and other power switching applications. This MOSFET is engineered to deliver high-speed switching, low on-resistance, and a high threshold voltage, ensuring minimal power loss and improved overall system efficiency.

The DMNH10H028SPS-13 comes in a compact, surface-mount PowerDI®5060-8 package, which is optimized for thermal performance and space-saving on the PCB. The package is designed to handle high current and power dissipation, making it suitable for high-density circuit designs.

Key features of the DMNH10H028SPS-13 include:

  • Low On-Resistance (R<sub>DS(on)): This MOSFET offers a very low on-resistance, which translates to reduced conduction losses and improved power efficiency.
  • High Continuous Drain Current (I<sub>D): It supports a high continuous drain current, enabling it to handle high power applications with ease.
  • Fast Switching Speed: The device's fast switching capabilities minimize switching losses and enhance performance in high-frequency circuits.
  • Robust Thermal Performance: The PowerDI®5060-8 package is designed for excellent heat dissipation, ensuring reliable operation even under high thermal conditions.
  • Lead-Free and RoHS Compliant: In line with environmental standards, the DMNH10H028SPS-13 is lead-free and fully compliant with the RoHS directive, making it a responsible choice for electronic manufacturers.

Diodes Incorporated's commitment to quality and performance is evident in the DMNH10H028SPS-13. This MOSFET is not only designed for high efficiency but also ensures reliability and durability for long-term operation. Whether you are designing power management systems or looking to enhance the efficiency of existing applications, the DMNH10H028SPS-13 is an excellent choice that will not disappoint.

With its robust design and superior electrical characteristics, the DMNH10H028SPS-13 from Diodes Incorporated stands out as a top-tier component for any power electronics engineer's toolkit.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9339 $60.7035
155+ $0.7664 $118.7920
235+ $0.7424 $174.4640
325+ $0.7184 $233.4800
420+ $0.6945 $291.6900
560+ $0.6227 $348.7120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,100 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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