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DMP2010UFG-7

Part No DMP2010UFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 12.7A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 3350 pF @ 10 V
Power Dissipation (Max) 900mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
Base Product Number DMP2010
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 585545-DMP2010UFG-7
Ultra Librarian 3D Model Ultra Librarian DMP2010UFG-7 CAD Model

Description

The DMP2010UFG-7 is a cutting-edge P-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is designed to deliver high efficiency and reliability for a wide range of applications, including load switch, power management, and battery protection circuits.

Key Features

  • Low Threshold Voltage: The device operates at a low threshold voltage, making it suitable for low-voltage applications and ensuring efficient power management.
  • High Power Dissipation: With a power dissipation of 1.4W, the DMP2010UFG-7 can handle significant levels of power, making it ideal for demanding circuits.
  • Advanced Packaging: Encased in a Green™ UFDFN2020-6 package, this MOSFET is not only environmentally friendly but also offers a compact footprint for space-constrained applications.
  • Low On-Resistance: The device boasts a low on-resistance of 65mΩ at VGS = -4.5V, which minimizes conduction losses and improves overall efficiency.
  • RoHS Compliant: Adhering to the Restriction of Hazardous Substances directive, this component is free from environmentally harmful substances, making it a responsible choice for electronic designs.

Applications

The versatility of the DMP2010UFG-7 allows it to be integrated into various electronic systems. Its prime applications include:

  • Power management in portable devices
  • Battery-powered applications
  • Load switch circuits
  • DC/DC converters
  • Reverse battery protection

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -20V Gate-Source Voltage (V<sub>GS) ±8V Continuous Drain Current (I<sub>D) -3.7A Power Dissipation (P<sub>D) 1.4W Operating Temperature Range -55°C to +150°C

Overall, the DMP2010UFG-7 from Diodes Incorporated stands out as a high-performance P-Channel MOSFET that offers a blend of low power consumption, high efficiency, and compact packaging, making it a top choice for designers looking to optimize their power-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1741 $58.7050
120+ $0.9634 $115.6080
185+ $0.9333 $172.6605
250+ $0.9032 $225.8000
325+ $0.8730 $283.7250
430+ $0.7828 $336.6040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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