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DMP21D0UFB4-7B

Part No DMP21D0UFB4-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 770MA 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 770mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 1.54nC @ 8V
Max Input Capacitance 80pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 430mW (Ta)
Maximum Rds On at Id,Vgs 495 mOhm @ 400mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X2-DFN1006-3
Dimension 3-XFDFN
Win Source Part Number 1033825-DMP21D0UFB4-7B
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMP21D0UFB4-7B CAD Model

Description

The DMP21D0UFB4-7B is a high-performance, P-Channel enhancement mode MOSFET from Diodes Incorporated, designed for power management applications. This MOSFET is built using advanced trench technology, which enables it to provide excellent on-resistance and a high threshold voltage. It's perfect for a variety of applications, including load switch, battery protection, and power management tasks in consumer electronics, portable devices, and other power-sensitive applications.

Key Features

  • Low On-Resistance: The DMP21D0UFB4-7B boasts a very low on-resistance, which results in minimal power loss and improved efficiency in electronic circuits.
  • High Power Dissipation: With a power dissipation of 1.25W, this MOSFET can handle significant energy without overheating, making it suitable for high-performance applications.
  • Small Footprint: The compact footprint of the DMP21D0UFB4-7B allows for space-saving designs, a crucial feature for modern, miniaturized electronic devices.
  • High Threshold Voltage: The high threshold voltage ensures that the MOSFET operates at optimal levels, preventing unintentional turn-on due to noise or fluctuating signals.
  • Advanced Trench Technology: The use of advanced trench technology in the manufacturing process provides superior performance compared to traditional planar designs.

Applications

The versatility of the DMP21D0UFB4-7B makes it suitable for a wide range of applications, particularly where power efficiency and space constraints are critical factors. Some of the typical applications include:

  • Power management modules
  • Load switches
  • Battery-powered devices
  • Smartphones and tablets
  • Portable media players
  • Wireless communication systems

Product Specifications

The DMP21D0UFB4-7B operates with a continuous drain current of 4A, and a minimum gate threshold voltage of 0.45V. The device is encapsulated in a small X2-DFN1006-3 package, which provides excellent thermal performance and is suitable for automated assembly processes.

Conclusion

With its low on-resistance, high power dissipation, and advanced trench technology, the DMP21D0UFB4-7B from Diodes Incorporated is an ideal choice for designers looking to enhance power management efficiency in compact electronic devices. Its robust performance and small form factor make it a go-to component for a myriad of modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
800+ $0.0627 $50.1600
1,950+ $0.0514 $100.2300
3,015+ $0.0498 $150.1470
4,150+ $0.0482 $200.0300
5,365+ $0.0466 $250.0090
7,180+ $0.0418 $300.1240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 129,380 pieces
MOQ: 800 pcs
Order Increment : 1 pcs
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