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DMP3085LSS-13

Part No DMP3085LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3.8A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 5.2nC @ 4.5V
Max Input Capacitance 563pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 70 mOhm @ 5.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 116756-DMP3085LSS-13
Family Name DMP3085LSS
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMP3085LSS-13 CAD Model

Description

Introducing the DMP3085LSS-13 P-Channel MOSFET from Diodes Incorporated

The DMP3085LSS-13 is a high-performance P-Channel enhancement mode field-effect transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This MOSFET is part of their extensive range of power management devices, tailored to meet the demanding requirements of modern electronic circuits.

Constructed with advanced trench technology, the DMP3085LSS-13 delivers excellent RDS(on) performance which translates to reduced conduction losses, making it an ideal choice for power-efficient applications. It is housed in an ultra-small SOP-8 package, making it perfect for space-constrained applications while providing the thermal performance required for high power density designs.

With a -30V drain-source breakdown voltage (VDS) and a -8.6A continuous drain current (ID) at 25°C, this MOSFET is capable of handling significant power levels. The low threshold voltage ensures that the device can be driven at lower gate voltages, making it compatible with low-voltage logic circuits and helping to minimize power usage.

The DMP3085LSS-13 is designed to operate with a minimal gate charge (Qg), which results in faster switching performance. This feature, coupled with its low input capacitance (Ciss), makes it an excellent choice for high-speed switching applications such as DC-DC converters, power management in portable devices, and other battery-operated gadgets.

For protection and reliability, the device incorporates features such as built-in thermal shutdown, over-current protection, and under-voltage lockout. These integrated protections ensure that the DMP3085LSS-13 operates within safe parameters, thereby enhancing the longevity and stability of the end application.

Overall, the DMP3085LSS-13 from Diodes Incorporated is a robust and reliable component that offers a combination of high efficiency, compact size, and advanced protection features. It is an excellent choice for designers seeking to optimize the performance and power handling capabilities of their electronic systems without compromising on space or thermal management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
460+ $0.1091 $50.1860
980+ $0.1022 $100.1560
1,520+ $0.0987 $150.0240
2,180+ $0.0918 $200.1240
2,830+ $0.0884 $250.1720
3,535+ $0.0849 $300.1215
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 460 pcs
Order Increment : 1 pcs
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