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DMP65H9D0HSS-13

Part No DMP65H9D0HSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 501V~650V SO-8 T&R / P-Channel 600 V 300mA (Ta) 1.25W (Ta) Surface Mount 8-SO
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1357327-DMP65H9D0HSS-13
Ultra Librarian 3D Model Ultra Librarian DMP65H9D0HSS-13 CAD Model

Description

The DMP65H9D0HSS-13 is a high-performance, P-Channel enhancement mode MOSFET produced by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power management and high-speed switching in a wide range of applications. The device is encapsulated in a space-saving, surface-mount package, making it ideal for compact and sophisticated electronic assemblies.

Key Features

  • Low On-Resistance: The MOSFET features a low on-resistance, which minimizes conduction losses and improves overall efficiency, making it suitable for high-performance power applications.
  • High-Speed Switching: With its fast switching capabilities, the DMP65H9D0HSS-13 is optimized for applications that require rapid on-off cycles, contributing to energy savings and improved performance.
  • P-Channel Device: As a P-Channel MOSFET, it allows for simpler drive circuitry in high-side switch configurations compared to N-Channel MOSFETs, due to the positive gate drive.
  • PowerDI® 5060-8 Package: The device is housed in a PowerDI® 5060-8 package, which offers excellent thermal performance and is suitable for high-density PCB layouts.
  • RoHS Compliant: The DMP65H9D0HSS-13 is compliant with RoHS standards, ensuring that it meets environmental and safety requirements by avoiding the use of hazardous substances.

Applications

The versatility of the DMP65H9D0HSS-13 allows it to be used in a variety of applications, including but not limited to:

  • Power Management Circuits
  • Load Switches
  • DC-DC Converters
  • Battery Management Systems
  • Motor Drives
  • Portable Electronic Devices

Technical Specifications

The DMP65H9D0HSS-13 boasts an impressive set of technical specifications, with a continuous drain current of up to -6.5A, and a gate-source voltage of ±8V. It operates over a wide temperature range, ensuring reliability under varying environmental conditions.

Conclusion

In conclusion, the DMP65H9D0HSS-13 from Diodes Incorporated is a robust and reliable P-Channel MOSFET that offers high efficiency, fast switching speeds, and a compact footprint. Its compliance with RoHS standards and suitability for a range of applications make it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3098 $52.3920
95+ $1.0747 $102.0965
145+ $1.0411 $150.9595
200+ $1.0075 $201.5000
260+ $0.9739 $253.2140
345+ $0.8732 $301.2540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,049 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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