EN
  • EN
  • DE

DMT2004UPS-13

Part No DMT2004UPS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 80A PWRDI5060-8  /  N-Channel 24 V 80A (Tc) 3W (Ta) Surface Mount PowerDI5060-8
Datasheet
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 24 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53.7 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1683 pF @ 15 V
Power Dissipation (Max) 3W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerDI5060-8
Package / Case 8-PowerTDFN
Base Product Number DMT2004
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Win Source Part Number 1055818-DMT2004UPS-13
Ultra Librarian 3D Model Ultra Librarian DMT2004UPS-13 CAD Model

Description

Introducing the DMT2004UPS-13 MOSFET by Diodes Incorporated

The DMT2004UPS-13 is a state-of-the-art, dual N-Channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This high-performance component is housed in a compact U-DFN2020-6 (Type B) package, making it an ideal solution for space-constrained applications.

The DMT2004UPS-13 boasts an array of features that make it a versatile choice for a wide range of electronic circuits. With a continuous drain current (ID) of 6.5A and a drain-source voltage (VDS) of 20V, this MOSFET is capable of handling significant power for its size. Its low on-resistance (RDS(on)) ensures high efficiency, which is crucial for power management applications.

One of the key advantages of the DMT2004UPS-13 is its dual configuration, which allows for the integration of two independent N-Channel MOSFETs within a single package. This not only saves board space but also simplifies the design process by reducing the number of components required. The device also features fast switching speeds, further enhancing its suitability for high-frequency applications.

Diodes Incorporated has designed the DMT2004UPS-13 with reliability in mind. The MOSFET is fully characterized for avalanche performance, ensuring it can withstand high energy pulses in the circuit. Additionally, it has low input capacitance and gate charge, minimizing power losses during the switching process. Its thermal performance is optimized for better heat dissipation, contributing to a longer operational lifespan and stable performance under varying conditions.

The DMT2004UPS-13 is RoHS compliant and halogen-free, reflecting Diodes Incorporated's commitment to environmental responsibility. It is commonly used in power management tasks, including DC-DC converters, power supplies, and load switches, as well as in motor control circuits and other high-efficiency applications.

Whether you're designing compact consumer electronics, portable devices, or sophisticated industrial systems, the DMT2004UPS-13 offers the performance, efficiency, and reliability that modern electronic applications demand.

You May Also Be Interested in

Infineon Technologies
Increased MOSFET dv/dt ruggedness
Lowest to $8.2310
Toshiba Semiconductor and Storage
Switching Voltage Regulators
Lowest to $5.4227
Fairchild/ON Semiconductor
P-Channel 2.5V Specified PowerTrench MOSFET
Lowest to $0.1285
Texas Instruments
N-CHANNEL NEXFET POWER MOSFET / Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
Lowest to $2.8757
Alpha & Omega Semiconductor Inc.
250V,20A N-Channel MOSFET
Lowest to $0.3708
Renesas Electronics America
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Lowest to $7.5410
Supertex, Inc
P-Channel Enhancement-Mode Vertical DMOS FETs
Lowest to $0.5971
Hitachi, Ltd
Silicon N-Channel MOS FET UHF Power Amplifier
Need more? Email Us
NXP / Nexperia
N-channel dual-gate MOS-FETs
Lowest to $1.1642

Top Sellers

Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
Altera
IC CPLD 128MC 10NS 100TQFP
Lowest to $3.3015
Solomon
LCD Display Controller 128-Pin LQFP Tray
Lowest to $7.4300
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.4542
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $2.2891
Vicor Corporation
DC DC CONVERTER 10-50V / 8V – 60VIN , 10V – 50VOUT , 50 – 140W Cool-Power ZVS Buck-Boost Regulator
Lowest to $41.3948
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $4.9895
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.4985
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.9399
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.3053
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess