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DMT3006LFDF-7

Part No DMT3006LFDF-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14.1A 6UDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 31 Weeks
Features N-Channel 30 V 14.1A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type F)
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 6-UDFN Exposed Pad
Case / Package U-DFN2020-6 (Type F)
Family Name DMT3006
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number DMT3006LFDF-7-ND, DMT3006LFDF-7DITR, DMT3006LFDF-7DIDKR, DMT3006LFDF-7DICT
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869127-DMT3006LFDF-7
Ultra Librarian 3D Model Ultra Librarian DMT3006LFDF-7 CAD Model

Description

DMT3006LFDF-7: A High-Performance MOSFET from Diodes Incorporated

The DMT3006LFDF-7 is a cutting-edge, N-Channel MOSFET brought to market by the reputable semiconductor manufacturer, Diodes Incorporated. This power MOSFET is designed to offer high efficiency and reliability for a wide range of applications, including but not limited to power management, load switching, and DC-DC conversion in computing, consumer electronics, and industrial systems.

With its advanced technology, the DMT3006LFDF-7 provides a low on-resistance (R<sub>DS(on)) characteristic, which ensures minimal power loss and heat generation during operation. This feature is particularly beneficial for applications that demand high energy efficiency and thermal management. The MOSFET is capable of handling continuous drain currents (I<sub>D) up to 8.3 A, making it suitable for high-power applications.

One of the key advantages of the DMT3006LFDF-7 is its robustness against repetitive avalanche events, which enhances its durability and longevity. It also features fast switching speeds, contributing to reduced switching losses and improved overall performance. The device comes in a compact, surface-mount PowerDI®3333-8 package, which is optimized for efficient PCB space utilization and simplified integration into various circuit designs.

The MOSFET's maximum drain-source voltage (V<sub>DSS) is rated at 30 V, and it has a maximum gate-source voltage (V<sub>GS) of ±20 V. Its thermal performance is further supported by a maximum junction temperature of 150°C, allowing it to operate reliably in a range of temperature environments. Additionally, the DMT3006LFDF-7 is RoHS compliant, reflecting Diodes Incorporated's commitment to environmental sustainability.

In summary, the DMT3006LFDF-7 from Diodes Incorporated is a high-performance, energy-efficient MOSFET that is ideal for designers looking to optimize their power systems. Its low on-resistance, high current capability, fast switching, and compact form factor make it an excellent choice for a multitude of electronic applications where performance and reliability are paramount.

For detailed specifications, application notes, and additional resources, interested parties are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7394 $51.7580
165+ $0.6067 $100.1055
260+ $0.5878 $152.8280
355+ $0.5688 $201.9240
455+ $0.5499 $250.2045
610+ $0.4930 $300.7300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,407 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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