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DMT6007LFG-13

Part No DMT6007LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 15A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 60 V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMT6007
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869145-DMT6007LFG-13
Ultra Librarian 3D Model Ultra Librarian DMT6007LFG-13 CAD Model

Description

DMT6007LFG-13 Product Overview

The DMT6007LFG-13 is a high-performance, surface-mount MOSFET from Diodes Incorporated, designed to deliver efficiency and reliability in a wide range of applications. This N-channel enhancement mode Field Effect Transistor is built using advanced trench MOSFET technology, ensuring excellent RDS(on) performance and low gate charge, which translates to reduced conduction and switching losses.

Key Features

  • Low On-Resistance: The DMT6007LFG-13 features a low on-resistance (RDS(on)) that minimizes power loss and improves overall efficiency, making it ideal for power management applications.
  • High Continuous Drain Current: With a continuous drain current (ID) of 60A, this MOSFET can handle high current loads, which is essential for applications requiring robust power delivery.
  • High-Speed Switching: The device is optimized for fast switching speeds, which is beneficial for switching power supplies and other applications where switching performance is critical.
  • PowerDI®5060-8 Package: Encased in a compact PowerDI®5060-8 package, the DMT6007LFG-13 offers an excellent power density and is suitable for space-constrained applications.

Applications

The versatility of the DMT6007LFG-13 MOSFET makes it suitable for a broad range of applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Load Switches

Electrical Characteristics

With a threshold voltage (VGS(th)) typically around 2.0V and a maximum drain-source voltage (VDS) of 60V, the DMT6007LFG-13 is capable of operating in various circuit topologies. The low gate charge (Qg) ensures that the power required to switch the MOSFET is kept to a minimum, further enhancing the energy efficiency of the end application.

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the DMT6007LFG-13 is no exception. It is designed to meet high standards of performance and reliability, ensuring that it can withstand the demands of even the most challenging electrical environments.

For engineers and designers looking for a robust and efficient power switching solution, the DMT6007LFG-13 from Diodes Incorporated is an excellent choice that combines performance, compact packaging, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1556 $52.0020
110+ $0.9482 $104.3020
165+ $0.9186 $151.5690
225+ $0.8889 $200.0025
295+ $0.8593 $253.4935
390+ $0.7704 $300.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 130,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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