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DMT6009LK3-13

Part No DMT6009LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 41V 60V TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 13.3A (Ta), 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 33.5nC @ 10V
Max Input Capacitance 1925pF @ 30V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.6W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1033882-DMT6009LK3-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMT6009LK3-13 CAD Model

Description

Overview of DMT6009LK3-13 MOSFET

The DMT6009LK3-13 is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) from Diodes Incorporated. This component is designed for a variety of applications, including power management tasks, load switching, and high-efficiency DC-DC converters. The DMT6009LK3-13 utilizes advanced trench MOSFET technology to offer superior performance in terms of low on-resistance and high switching speeds.

Key Features

  • Low On-Resistance: The device features an extremely low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), enabling it to handle significant power levels in a compact form factor.
  • High-Speed Switching: With its fast switching capabilities, the DMT6009LK3-13 is suitable for high-frequency applications, reducing switching losses and improving performance.
  • Low Threshold Voltage: The low gate threshold voltage (V<sub>GS(th)) allows for easy drive and control, making it compatible with a wide range of driving circuits and logic levels.
  • PowerDI3333-8 Package: Enclosed in a PowerDI3333-8 package, it provides excellent thermal performance and a compact footprint, suitable for space-constrained applications.

Applications

The DMT6009LK3-13 is versatile and can be used in various applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • Power tool applications

Reliability and Quality

Diodes Incorporated is known for its commitment to quality, and the DMT6009LK3-13 is no exception. It is built to meet high standards of reliability and performance, ensuring a long operational life and consistent functionality. The device also includes protection features such as overcurrent and thermal shutdown, further enhancing its robustness and durability in demanding environments.

With its combination of efficiency, power handling, and compact packaging, the DMT6009LK3-13 is an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6639 $59.7510
215+ $0.5449 $117.1535
330+ $0.5278 $174.1740
455+ $0.5107 $232.3685
585+ $0.4938 $288.8730
785+ $0.4426 $347.4410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,100 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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