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DMT6010LFG-13

Part No DMT6010LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 13A 8-Pin PowerDI EP T/R / MOSFET N-CH 60V 13A POWERDI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 13A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 41.3nC @ 10V
Max Input Capacitance 2090pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 41W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI3333-8
Dimension 8-PowerWDFN
Win Source Part Number 1033883-DMT6010LFG-13
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMT6010LFG
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian DMT6010LFG-13 CAD Model

Description

DMT6010LFG-13 MOSFET by Diodes Incorporated

The DMT6010LFG-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This power MOSFET is a testament to the company's commitment to providing energy-efficient, compact, and reliable solutions for a wide range of electronic applications.

Key Features:

  • Low On-Resistance: The DMT6010LFG-13 boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency in operation.
  • High Continuous Drain Current: With a robust continuous drain current (I<sub>D) rating, this MOSFET can handle significant current loads, making it suitable for high-power applications.
  • PowerDI5060-8 Package: Encased in a PowerDI5060-8 package, the device ensures a compact footprint while providing excellent thermal performance and mechanical robustness.
  • Halogen-Free: As an environmentally conscious choice, the DMT6010LFG-13 is completely halogen-free, adhering to the latest environmental standards and regulations.
  • Lead-Free Finish: The device is finished with lead-free terminals, which is not only eco-friendly but also meets the requirements for RoHS compliance.

Applications:

The versatility of the DMT6010LFG-13 makes it an ideal choice for a variety of applications, including:

  • DC-DC Converters
  • Power Management Functions
  • Load Switches
  • Motor Drives
  • Battery Management Systems
  • Computing and Server Applications

Performance Specifications:

This MOSFET is engineered to deliver high-speed switching with a low gate charge (Q<sub>G), which is critical for reducing switching losses in high-frequency operations. The DMT6010LFG-13 also features a maximum drain-source voltage (V<sub>DSS) of 60V, providing a wide safety margin for most low to medium voltage applications.

In conclusion, the DMT6010LFG-13 from Diodes Incorporated represents a blend of performance, efficiency, and reliability, making it a suitable choice for designers and engineers looking to optimize their power electronic systems.

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