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DSS8110Y-7

Part No DSS8110Y-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 200mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 500mA, 10V
Maximum Power Dissipation 625mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 1035492-DSS8110Y-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DSS8110Y-7 CAD Model

Description

Introducing the DSS8110Y-7 P-Channel MOSFET from Diodes Incorporated

The DSS8110Y-7 is a high-performance P-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power management and control across a wide range of applications, making it a versatile component for designers and engineers.

Constructed with advanced trench technology, the DSS8110Y-7 offers low on-resistance and a high threshold voltage, which translates to reduced power loss and enhanced energy efficiency in your circuits. With its compact SOT-23 package, this MOSFET is an ideal choice for space-constrained applications, providing powerful performance in a small footprint.

Key features of the DSS8110Y-7 include:

  • Low Threshold Voltage: This MOSFET operates at a low gate threshold voltage, allowing for easy control with low-voltage logic signals.
  • High Power Dissipation: With an impressive power dissipation capability, the DSS8110Y-7 can handle significant power levels, making it suitable for demanding environments.
  • Low On-Resistance: The device's low R<sub>DS(on) ensures minimal voltage drop across the MOSFET when on, leading to higher efficiency and lower heat generation.
  • Fast Switching Speed: Fast switching characteristics make the DSS8110Y-7 suitable for high-frequency applications, providing responsive power control.

This MOSFET is perfect for a range of applications, including load switch circuits, power management systems, and as a switch for various peripheral devices. Its robustness is further enhanced by its ability to withstand high continuous and pulsed currents, ensuring reliable operation under a variety of conditions.

For design engineers looking for a P-Channel MOSFET that offers both performance and reliability, the DSS8110Y-7 from Diodes Incorporated is an excellent choice. Whether you're designing power supplies, motor controls, or battery management systems, this MOSFET will help you achieve efficient and effective results.

With the DSS8110Y-7, Diodes Incorporated continues to demonstrate its commitment to providing innovative semiconductor solutions that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
770+ $0.0752 $57.9040
1,870+ $0.0618 $115.5660
2,900+ $0.0598 $173.4200
3,995+ $0.0579 $231.3105
5,155+ $0.0561 $289.1955
6,915+ $0.0501 $346.4415
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,860 pieces
MOQ: 770 pcs
Order Increment : 1 pcs
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