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DST847BPDP6-7

Part No DST847BPDP6-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 45V 0.1A SOT963
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 250mW
Frequency - Transition 175MHz, 340MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-963
Win Source Part Number 014933-DST847BPDP6-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DST847BPDP6-7 CAD Model

Description

Introducing the DST847BPDP6-7 MOSFET from Diodes Incorporated

The DST847BPDP6-7 is a sophisticated, high-performance MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This device is designed to meet the demanding requirements of modern electronic circuits, providing efficient power management and switching capabilities.

Key Features

  • Device Type: MOSFET - Metal-Oxide Semiconductor Field-Effect Transistor
  • Configuration: Dual N-Channel
  • Package: PowerDI®5060-8
  • Continuous Drain Current (ID): 6 A
  • Drain-Source Voltage (VDSS): 40 V
  • RDS(on): Low on-resistance for improved efficiency
  • Operating Temperature Range: -55°C to +150°C

Product Advantages

The DST847BPDP6-7 MOSFET is engineered to deliver high efficiency and reliability in a compact form factor. Its dual N-Channel configuration allows for flexibility in design, enabling the use of a single component instead of multiple transistors, which can save space and reduce costs. The PowerDI®5060-8 package is designed to optimize the thermal performance and minimize the footprint on the PCB.

With a continuous drain current of 6 A and a drain-source voltage of 40 V, this MOSFET can handle significant power levels, making it suitable for a wide range of applications. The low RDS(on) value ensures minimal power loss during operation, which translates to better energy efficiency and longer battery life in portable devices.

Applications

The DST847BPDP6-7 is ideal for use in various applications, including:

  • Power management systems
  • DC-DC converters
  • Battery powered devices
  • Motor control circuits
  • Load switches
  • Portable electronic devices

Whether you are designing consumer electronics, automotive systems, or industrial equipment, the DST847BPDP6-7 provides a reliable solution for your power switching and management needs.

With its robust construction and proven performance, the DST847BPDP6-7 from Diodes Incorporated is a choice that engineers can trust for their critical design projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
435+ $0.1161 $50.5035
920+ $0.1088 $100.0960
1,430+ $0.1051 $150.2930
2,045+ $0.0978 $200.0010
2,660+ $0.0941 $250.3060
3,320+ $0.0904 $300.1280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 129,690 pieces
MOQ: 435 pcs
Order Increment : 1 pcs
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