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DXT5551-13

Part No DXT5551-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 0.6A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 200mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Maximum Power Dissipation 1W
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 015096-DXT5551-13
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DXT5551-13 CAD Model

Description

Introducing the DXT5551-13 Transistor from Diodes Incorporated

The DXT5551-13 is a high-performance NPN bipolar junction transistor (BJT) designed to meet the needs of a wide range of electronic applications. Manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal components, this transistor is engineered to deliver reliable and efficient performance.

Key Features and Benefits

  • High Current Capacity: The DXT5551-13 is capable of handling a continuous collector current (Ic) of 1A, making it suitable for medium power applications.
  • Low Saturation Voltage: It offers a low collector-emitter saturation voltage (Vce(sat)), which reduces power loss and improves efficiency in switching applications.
  • High Gain Bandwidth Product: With its high transition frequency (fT), this transistor is an excellent choice for amplification of high-frequency signals.
  • Surface-Mount Package: Packaged in a SOT-89-3, the DXT5551-13 is designed for surface-mount technology (SMT), providing ease of integration into various circuit designs.
  • RoHS Compliant: The device is RoHS compliant, ensuring it meets the European Union's directives on the restriction of hazardous substances.

Applications

The versatility of the DXT5551-13 allows it to be used in a multitude of applications, including:

  • Switching regulators
  • Power management functions
  • Motor control circuits
  • Audio amplifiers
  • Signal amplification

Technical Specifications

Some of the technical specifications of the DXT5551-13 transistor include:

  • Collector-Emitter Voltage (Vceo): 60V
  • Emitter-Base Voltage (Vebo): 5V
  • Collector Current - Continuous (Ic): 1A
  • Power Dissipation (Pd): 1W
  • DC Current Gain (hFE): 120 to 470
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

Whether you are designing power supplies, consumer electronics, or industrial systems, the DXT5551-13 from Diodes Incorporated offers the performance and reliability needed to build effective solutions. Its robust characteristics and compliance with environmental standards make it a smart choice for your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
705+ $0.0713 $50.2665
1,500+ $0.0668 $100.2000
2,325+ $0.0646 $150.1950
3,330+ $0.0601 $200.1330
4,330+ $0.0578 $250.2740
5,410+ $0.0555 $300.2550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 705 pcs
Order Increment : 1 pcs
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