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Same model may have multiple batches, images only for reference.
SI1400DL-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1400DL-T1-E3

Part No SI1400DL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.6A SC70-6
Datasheet
SI1400DL-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 4nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 568mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 1.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 028344-SI1400DL-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1400DL-T1-E3 CAD Model

Description

The Vishay SI1400DL-T1-E3 is an N-channel MOSFET designed for use in applications requiring high switching speeds and low on-state resistance.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 1.6A
  • Gate-Source Threshold Voltage: 600mV @ 250μA
  • Maximum Gate Charge: 4nC @ 4.5V
  • Package: SC-70-6 (SOT-363)
  • Packaging: Reel
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3991 $57.8695
355+ $0.3275 $116.2625
550+ $0.3173 $174.5150
755+ $0.3070 $231.7850
975+ $0.2968 $289.3800
1,305+ $0.2661 $347.2605
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Availability: 66,000 pieces
MOQ: 145 pcs
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