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DZTA42-13

Part No DZTA42-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 300V 0.5A 2000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS NPN 300V 0.5A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 500mV @ 2mA, 20mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 40 @ 30mA, 10V
Maximum Power Dissipation 1W
Frequency - Transition 50MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 080853-DZTA42-13
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DZTA42
Introduction Date August 06, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian DZTA42-13 CAD Model

Description

Introducing the DZTA42-13 PNP Transistor from Diodes Incorporated

The DZTA42-13 is a high-performance PNP transistor designed by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This versatile transistor is ideal for a wide range of applications, including signal processing, power management, and amplification tasks in commercial, industrial, and consumer electronic devices.

The DZTA42-13 boasts excellent hFE linearity and low saturation voltage, making it highly efficient in various circuit configurations. It is designed in a robust SOT-223 package, which ensures a compact footprint while providing adequate power handling capabilities. The SOT-223 package is known for its good thermal performance, making the DZTA42-13 suitable for applications with moderate power dissipation requirements.

Key Features of the DZTA42-13:

  • Voltage Ratings: This transistor has a collector-base voltage (VCBO) of -300V, a collector-emitter voltage (VCEO) of -300V, and an emitter-base voltage (VEBO) of -5V, ensuring it can handle high voltage applications with ease.
  • Current Handling: It can support a continuous collector current (IC) of up to -500mA, allowing it to drive moderate loads.
  • Power Dissipation: With a power dissipation (PD) of 1.25W, the DZTA42-13 can manage a fair amount of power, making it suitable for various power applications.
  • hFE Characteristic: This transistor features a high DC current gain (hFE) range of 120 to 240 at IC = -150mA, providing stable and predictable amplification.

In addition to its electrical attributes, the DZTA42-13 is also characterized by its high reliability and long operational life, which are hallmarks of Diodes Incorporated's commitment to quality. The device is also RoHS compliant, meaning it meets the latest environmental standards by avoiding the use of hazardous substances in its construction.

Whether you're designing power supplies, audio amplifiers, or looking for a reliable switch for your circuit, the DZTA42-13 from Diodes Incorporated is a choice that offers both performance and durability. By selecting this PNP transistor, engineers and designers can ensure their projects benefit from the high standards and innovative technology that Diodes Incorporated is known for.

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Pricing & Ordering

Quantity Unit Price Ext. Price
410+ $0.1223 $50.1430
1,000+ $0.1003 $100.3000
1,545+ $0.0972 $150.1740
2,130+ $0.0941 $200.4330
2,755+ $0.0909 $250.4295
3,685+ $0.0815 $300.3275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,574 pieces
MOQ: 410 pcs
Order Increment : 1 pcs
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