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Same model may have multiple batches, images only for reference.
IRFR5305TRL Real Image
Same model may have multiple batches, images only for reference.

IRFR5305TRL

Part No IRFR5305TRL
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET P-CH 55V 31A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 31A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 65mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 63nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 110W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 714566-IRFR5305TRL
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR5305TRL CAD Model

Description

The Infineon Technologies IRFR5305TRL MOSFET is a P-Channel transistor designed to operate in the temperature range of -55°C to 175°C.

  • Vds Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 31A
  • Description: it is a reliable choice for use in Discrete Semiconductor Products. The device is packaged in TO-252-3, DPak (2 Leads + Tab), SC-63 and has a Power Dissipation (Maximum) of 110W. The FET Feature is not specified, but the Gate Charge (Qg) (Maximum) @ Vgs is 63nC @ 10V. The Gate Source Voltage (Maximum) is ±20V, and the Input Capacitance (Ciss) (Maximum) @ Vds is 1200pF @ 25V. The device is obsolete, and its Popularity is low.

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