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FZT757TA

Part No FZT757TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 300V 0.5A SOT-223 / Trans GP BJT PNP 300V 0.5A 2000mW 4-Pin(3+Tab) SOT-223 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 500mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 50 @ 100mA, 5V
Maximum Power Dissipation 2W
Frequency - Transition 30MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 016617-FZT757TA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name FZT757
Introduction Date October 28, 1997
ECCN EAR99
Country of Origin Germany
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian FZT757TA CAD Model

Description

The FZT757TA from Diodes Incorporated is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is known for its high current gain and low saturation voltage, making it an excellent choice for amplification and switching applications where efficient power management is crucial.

Key Features

  • High Current Gain (hFE): The FZT757TA offers a high current gain, which is essential for applications that require signal amplification. This feature ensures that the transistor can amplify weak input signals to a much stronger output level.
  • Low Saturation Voltage: With its low V<sub>CE(sat), the device minimizes power loss when in the on-state, which is particularly beneficial in battery-powered devices where energy efficiency is paramount.
  • High Collector Current: The transistor can handle a continuous collector current (I<sub>C) of up to 3A, making it suitable for driving moderate to high current loads.
  • Power Dissipation: The FZT757TA is capable of dissipating up to 2W of power, which helps in maintaining stability and performance in high-power applications.
  • Complementary NPN Type: This PNP transistor has a complementary NPN counterpart, which allows for the creation of complementary or push-pull amplifier configurations, often used in audio amplifiers and power regulators.

Applications

The versatility of the FZT757TA makes it suitable for a variety of electronic circuits. It is commonly used in:

  • Power Management Circuits
  • Audio Amplifiers
  • Signal Processing
  • Switching Regulators
  • Driver Stages in Hi-Fi Amplifiers
  • Motor Control Circuits

Package and Quality

The FZT757TA comes in a SOT-223 package, which is a compact surface-mount package. This allows for efficient use of PCB space, making it ideal for modern, densely packed electronic assemblies. Diodes Incorporated ensures high-quality and reliability for their components, and the FZT757TA is no exception, adhering to strict industry standards for performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3895 $50.6350
315+ $0.3196 $100.6740
485+ $0.3096 $150.1560
670+ $0.2996 $200.7320
865+ $0.2896 $250.5040
1,160+ $0.2597 $301.2520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,630 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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