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Same model may have multiple batches, images only for reference.
SIA413ADJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA413ADJ-T1-GE3

Part No SIA413ADJ-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 12V 12A SC70-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 12V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Maximum) at Id, Vgs 29mOhm at 6.7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 57nC at 8V
Gate Source Voltage (Maximum) ±8V
Input Capacitance (Ciss) (Maximum) at Vds 1800pF at 10V
Power Dissipation (Maximum) 19W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SC-70-6 Single
Manufacturer Package PowerPAK SC-70-6
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 712151-SIA413ADJ-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIA413ADJ-T1-GE3 CAD Model

Description

The Vishay Siliconix SIA413ADJ-T1-GE3 is a P-Channel MOSFET transistor, manufactured by Vishay Siliconix.

  • Package: PowerPAK SC-70-6 Single
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 12A
  • Maximum Rds On @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
  • Gate-Source Voltage(th) (maximum) @ Id: 1V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 57nC @ 8V
  • Input Capacitance (Ciss) (maximum) @ Vds: 1800pF @ 10V
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation (maximum): 19W

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