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Same model may have multiple batches, images only for reference.
HAT2170H-EL-E Real Image
Same model may have multiple batches, images only for reference.

HAT2170H-EL-E

Part No HAT2170H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 45A LFPAK
Datasheet
HAT2170H-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 4650pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 22.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 040429-HAT2170H-EL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2170H-EL-E CAD Model

Description

The Renesas Electronics America HAT2170H-EL-E is a high-performance MOSFET electronic component designed for use in various applications. It offers high performance and reliability and is suitable for use in various electronic devices. The component is compact and easy to install, making it ideal for use in various electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8154 $61.1550
175+ $0.6699 $117.2325
270+ $0.6480 $174.9600
370+ $0.6272 $232.0640
480+ $0.6064 $291.0720
640+ $0.5440 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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