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MMBT2222ALP4-7B

Part No MMBT2222ALP4-7B
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.6A 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 10nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 460mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X2-DFN1006-3
Win Source Part Number 114897-MMBT2222ALP4-7B
Family Name MMBT2222ALP4
Introduction Date February 24, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2030
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Defence, Military & Aerospace, Automotive, Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian MMBT2222ALP4-7B CAD Model

Description

Product Overview: MMBT2222ALP4-7B

The MMBT2222ALP4-7B is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for use in a wide range of electronic applications. This transistor is part of the MMBT2222A series and is known for its efficiency, reliability, and versatility.

Key Features

  • High Current Gain: The MMBT2222ALP4-7B offers a high current gain (hFE), which is crucial for amplification applications, ensuring a robust and reliable signal transmission.
  • Low Saturation Voltage: It exhibits low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency in switching applications.
  • High-Speed Switching: This transistor is capable of high-speed switching, making it ideal for high-frequency operations in digital circuits.
  • Surface-Mount Package: The MMBT2222ALP4-7B comes in a compact SOT-23 package, which is suitable for automated assembly processes and helps in saving PCB space.
  • Power Dissipation: It has a power dissipation of 350 mW, which allows it to handle moderate power levels in electronic circuits.
  • Operating Temperature Range: The device can operate across a wide temperature range from -55°C to +150°C, making it suitable for industrial and automotive environments.

Applications

The MMBT2222ALP4-7B is commonly used in a variety of applications, including:

  • Signal Amplification
  • Switching Loads
  • Linear Amplification
  • Driver Stages in Hi-Fi Amplifiers
  • Control Circuits
  • Power Management Functions

Quality and Reliability

Diodes Incorporated ensures that the MMBT2222ALP4-7B meets stringent quality standards. The device is manufactured with high-grade materials and is subjected to rigorous testing to guarantee its performance and durability in various conditions.

Environmental Compliance

The MMBT2222ALP4-7B is RoHS compliant and free from environmentally harmful substances. Diodes Incorporated is committed to providing environmentally friendly products that meet the current global environmental standards.

With its robust design and versatile characteristics, the MMBT2222ALP4-7B is an excellent choice for designers seeking a reliable transistor for their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,020+ $0.0491 $50.0820
2,485+ $0.0403 $100.1455
3,840+ $0.0391 $150.1440
5,295+ $0.0378 $200.1510
6,835+ $0.0366 $250.1610
9,150+ $0.0328 $300.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 1020 pcs
Order Increment : 1 pcs
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