The MMBT3904-7-G-88 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier applications. Manufactured by Diodes Incorporated, this transistor is a testament to the company's commitment to providing robust and reliable components for a wide array of electronic circuits.

Key Features

• Transistor Polarity: NPN - Suitable for amplification of signals in electronic circuits.
• Collector-Emitter Voltage (Vceo): 40V - Offers a good range for various applications.
• Collector Current (Ic): 200mA - Capable of handling moderate current levels.
• Power Dissipation (Pd): 350mW - Ensures reliable operation without overheating.
• DC Current Gain (hFE): 100 to 300 - Provides sufficient gain for most general-purpose applications.
• Operating Temperature Range: -55°C to +150°C - Suitable for use in a wide range of environmental conditions.
• Package / Case: SOT-23-3 - Compact and surface-mountable for space-saving designs.

Applications

The MMBT3904-7-G-88 transistor is a versatile component that can be used in various electronic circuits, including but not limited to:

• Switching and amplification in consumer electronics
• Signal processing in communication devices
• Drive circuits in industrial control systems
• Power management in portable battery-operated devices

Quality and Reliability

Diodes Incorporated ensures that the MMBT3904-7-G-88 meets the highest quality standards. Each transistor is subjected to rigorous testing and quality control procedures, guaranteeing performance and reliability for professional and hobbyist applications alike.

Ordering Information

The product is available with the ordering number MMBT3904-7-G-88 and is supplied in tape and reel packaging for efficient assembly processes. For detailed purchasing information and bulk orders, please contact Diodes Incorporated or an authorized distributor.