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MMBT3906LP-7

Part No MMBT3906LP-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.2A 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 250mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-DFN1006 (1.0x0.6)
Win Source Part Number 023755-MMBT3906LP-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMBT3906LP-7 CAD Model

Description

Product Overview: MMBT3906LP-7

The MMBT3906LP-7 from Diodes Incorporated is a high-quality PNP bipolar junction transistor (BJT) specifically designed for general-purpose amplifier and switching applications. This robust semiconductor device is a practical choice for a wide array of electronic circuits, providing reliable performance in a compact SOT-23 package.

Key Features

  • Transistor Type: The MMBT3906LP-7 is a PNP transistor, which means it is designed to control the flow of current between the emitter and collector terminals when a small current is applied to the base terminal.
  • High Current Gain: With a high current gain (hFE), this transistor can amplify weak signals, making it an excellent choice for various amplification needs.
  • Low Power Consumption: Optimized for low power applications, the MMBT3906LP-7 helps in creating energy-efficient designs.
  • Surface-Mount Package: The SOT-23 package allows for efficient use of PCB space, which is crucial for modern, high-density electronic products.
  • RoHS Compliant: Adhering to environmental standards, this product is RoHS compliant, minimizing the use of hazardous substances in its construction.

Applications

The versatility of the MMBT3906LP-7 lends itself to a broad spectrum of applications, including:

  • Signal amplification circuits
  • Switching controls
  • Power management solutions
  • Consumer electronics
  • Telecommunication systems
  • And other general-purpose applications

Technical Specifications

With a collector-emitter voltage (VCEO) of -40V and a collector current (IC) of -200mA, the MMBT3906LP-7 is capable of handling moderate voltage and current levels. The device also features a low collector-emitter saturation voltage, which contributes to its efficiency in various circuit configurations.

In conclusion, the MMBT3906LP-7 from Diodes Incorporated is a reliable and versatile PNP transistor that offers a balance of performance, power efficiency, and miniaturization, making it an excellent choice for designers seeking a general-purpose transistor solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
670+ $0.0751 $50.3170
1,625+ $0.0616 $100.1000
2,515+ $0.0597 $150.1455
3,465+ $0.0578 $200.2770
4,475+ $0.0559 $250.1525
5,990+ $0.0501 $300.0990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,030 pieces
MOQ: 670 pcs
Order Increment : 1 pcs
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