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MMBT5551-7-F

Part No MMBT5551-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 0.6A SOT23-3 / Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 200mV @ 5mA, 50mA
Collector Cut-off Current(Max) 500nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 023778-MMBT5551-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name MMBT5551
Introduction Date May 30, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian MMBT5551-7-F CAD Model

Description

Product Overview: MMBT5551-7-F by Diodes Incorporated

The MMBT5551-7-F is a high-performance NPN bipolar transistor designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This transistor is part of their extensive range of transistor products designed for use in a wide array of electronic applications.

With its compact SOT-23 package, the MMBT5551-7-F offers designers a small form factor solution that is ideal for space-constrained applications. Despite its small size, it delivers robust performance with a collector-emitter voltage (V<sub>CEO) of 160V, collector current (I<sub>C) of up to 600mA, and a power dissipation of 350mW, making it suitable for high-voltage and medium-power applications.

The transistor features a continuous collector current of 600mA, which allows it to handle moderate levels of current without overheating. Its high gain bandwidth product (f<sub>T) of 100MHz makes it well-suited for amplification applications at radio frequencies. The MMBT5551-7-F also boasts a low collector-emitter saturation voltage, ensuring efficient operation with minimal power loss, which is crucial for battery-powered devices.

Common applications for the MMBT5551-7-F include signal amplification, switching circuits, and power management in consumer electronics, telecommunication devices, and computing equipment. It is also used in driving small motors, power supplies, and in various types of control circuits due to its fast switching capabilities.

Diodes Incorporated has designed the MMBT5551-7-F with reliability in mind. The device is characterized for operation from -55°C to +150°C, making it suitable for use in harsh environments. Additionally, it is compliant with RoHS and Green standards, reflecting the company's commitment to environmental sustainability.

In summary, the MMBT5551-7-F from Diodes Incorporated is a versatile, high-voltage NPN bipolar transistor that offers a balance of power and efficiency in a small package, ideal for a broad range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
845+ $0.0594 $50.1930
1,800+ $0.0557 $100.2600
2,790+ $0.0538 $150.1020
4,000+ $0.0500 $200.0000
5,190+ $0.0482 $250.1580
6,480+ $0.0463 $300.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 845 pcs
Order Increment : 1 pcs
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