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MMBTA55-7-F

Part No MMBTA55-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 0.5A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 50MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 023799-MMBTA55-7-F
Family Name MMBTA55
Introduction Date April 12, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian MMBTA55-7-F CAD Model

Description

MMBTA55-7-F - PNP Transistor from Diodes Incorporated

The MMBTA55-7-F is a high-quality PNP transistor manufactured by Diodes Incorporated, renowned for its reliability and performance in a wide range of electronic applications. This semiconductor device is designed to suit various circuit functions, including amplification, switching, and voltage regulation, making it an essential component in modern electronics.

Constructed with state-of-the-art materials and technology, the MMBTA55-7-F boasts a compact SOT-23 package, which is ideal for space-constrained applications. Its small form factor enables designers to create more compact and efficient circuit designs without compromising on power and functionality.

Key Features:

  • Transistor Type: The MMBTA55-7-F is a PNP (Positive-Negative-Positive) bipolar junction transistor (BJT), which means it is controlled by the flow of current and is commonly used for amplification and switching purposes.
  • Current Handling: This transistor is capable of handling a continuous collector current (Ic) of up to -500 mA, making it suitable for moderate power applications.
  • High Voltage: With a collector-emitter voltage (Vceo) of -160V, the MMBTA55-7-F can be used in circuits that require high voltage operation.
  • Power Dissipation: It has a power dissipation of 300 mW, which helps to prevent overheating and ensure stable operation over extended periods.
  • Operating Temperature: The device can operate over a wide temperature range from -55°C to +150°C, offering reliable performance under various environmental conditions.

Applications:

The versatility of the MMBTA55-7-F allows it to be used in numerous applications, including:

  • Signal amplification in audio and communication devices.
  • Power management circuits such as voltage regulators and converters.
  • Switching applications for consumer electronics and industrial equipment.
  • Driver stages in amplifiers and other electronic circuits.

With its robust construction and excellent electrical characteristics, the MMBTA55-7-F from Diodes Incorporated is an excellent choice for designers and engineers looking for a reliable PNP transistor. Its compatibility with automated assembly processes also makes it a favorite among manufacturers for mass production of electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,360+ $0.0369 $50.1840
3,305+ $0.0303 $100.1415
5,105+ $0.0294 $150.0870
7,045+ $0.0284 $200.0780
9,095+ $0.0275 $250.1125
12,200+ $0.0246 $300.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,796 pieces
MOQ: 1360 pcs
Order Increment : 1 pcs
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