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MMDT3906-7-F

Part No MMDT3906-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 40V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 200mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 023913-MMDT3906-7-F
Ultra Librarian 3D Model Ultra Librarian MMDT3906-7-F CAD Model

Description

Diodes Incorporated MMDT3906-7-F Dual PNP Transistor

The MMDT3906-7-F from Diodes Incorporated is a high-performance dual PNP transistor designed to deliver efficient current amplification and switching capabilities. This semiconductor device is housed in a compact SOT-363 package, making it an ideal choice for space-constrained applications where two independent PNP transistors are required.

The MMDT3906-7-F is characterized by its low collector-emitter saturation voltage and high gain bandwidth product, ensuring reliable performance in a variety of circuits. With its complementary NPN counterpart often used in push-pull and other amplifier configurations, this dual PNP transistor is versatile for integration into audio amplifiers, signal processing, and power management circuits.

Key Specifications:

  • Configuration: Dual PNP transistors in a single package for compact design solutions.
  • Collector-Emitter Voltage (Vceo): Capable of withstanding voltages up to -40V, which provides a good margin for typical low to medium voltage applications.
  • Collector Current (Ic): Continuous collector current up to -200mA, making it suitable for driving moderate loads.
  • Power Dissipation (Pd): With a power dissipation of 300mW, the device can handle a fair amount of power for its size.
  • DC Current Gain (hFE): High DC current gain with a minimum value of 120 at Ic = -10mA, Vce = -10V, which ensures efficient current amplification.
  • Transition Frequency (fT): The transition frequency of 300MHz allows for use in high-speed switching applications.
  • Operating Temperature Range: The device can operate over a wide temperature range from -55°C to +150°C, accommodating various environmental conditions.
  • Package: Supplied in a RoHS-compliant SOT-363 package, which is designed for surface mount technology (SMT).

Whether you're designing power management systems, signal conditioning modules, or general-purpose amplification circuits, the MMDT3906-7-F offers a reliable and efficient solution that meets the stringent requirements of modern electronic devices. Its dual transistor configuration saves space and reduces component count, making it an excellent choice for both prototyping and mass production.

With Diodes Incorporated's reputation for quality and durability, the MMDT3906-7-F is a dependable component for your electronic projects. Its performance and compact form factor make it a valuable addition to any designer's toolkit.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,130+ $0.0444 $50.1720
2,750+ $0.0364 $100.1000
4,250+ $0.0353 $150.0250
5,870+ $0.0341 $200.1670
7,580+ $0.0330 $250.1400
10,140+ $0.0296 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 1130 pcs
Order Increment : 1 pcs
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