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MMDT5401-7-F

Part No MMDT5401-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 150V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 60 @ 10mA, 5V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 023918-MMDT5401-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMDT5401-7-F CAD Model

Description

Product Overview: MMDT5401-7-F from Diodes Incorporated

The MMDT5401-7-F is a high-quality dual PNP transistor from Diodes Incorporated, designed to offer a compact, high-performance solution for a variety of electronic applications. This product is housed in a small SOT-363 package, which makes it ideal for space-constrained applications where two independent PNP transistors are required.

This dual transistor features a continuous collector current of up to 150mA and a collector-emitter voltage of 150V, making it suitable for moderate power switching and amplification tasks. The MMDT5401-7-F is characterized by its low collector-emitter saturation voltage and high current gain bandwidth product, which ensures efficient operation even in high-frequency circuits.

Key Features

  • Dual PNP Transistors: The device contains two independent PNP transistors, providing design flexibility and saving board space.
  • Power Handling: With a continuous collector current of 150mA, it can handle moderate power requirements for various applications.
  • High Voltage Rating: A collector-emitter voltage of 150V enables the device to withstand higher voltage applications.
  • Low Saturation Voltage: The low collector-emitter saturation voltage reduces power loss and improves efficiency.
  • High-Frequency Performance: The high current gain bandwidth product makes it suitable for applications requiring high-speed switching.
  • Compact Package: The SOT-363 package is ideal for applications where PCB space is at a premium.

Applications

The MMDT5401-7-F is versatile and can be used in a wide range of applications, including but not limited to:

  • Power management circuits
  • Signal processing
  • Switching regulators
  • Linear amplification stages
  • Consumer electronics
  • Telecommunication systems

With its robust construction and reliable performance, the MMDT5401-7-F from Diodes Incorporated is an excellent choice for designers looking to create efficient and compact electronic systems. Its dual-transistor design and high-voltage capabilities make it a versatile component for a multitude of electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
605+ $0.0833 $50.3965
1,465+ $0.0684 $100.2060
2,265+ $0.0663 $150.1695
3,125+ $0.0641 $200.3125
4,035+ $0.0620 $250.1700
5,400+ $0.0556 $300.2400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 605 pcs
Order Increment : 1 pcs
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