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MMDT5401-7

Part No MMDT5401-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 150V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor Array 2 PNP (Dual) 150V 200mA 300MHz 200mW Surface Mount SOT-363
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Case / Package SOT-363
Family Name MMDT5401
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number MMDT5401TR-ND, MMDT5401TR, MMDT5401CT-ND, MMDT54017, MMDT5401CT, MMDT5401DICT, MMDT5401, MMDT5401DITR
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 927527-MMDT5401-7
Ultra Librarian 3D Model Ultra Librarian MMDT5401-7 CAD Model

Description

The MMDT5401-7 from Diodes Incorporated is a high-performance, dual PNP transistor designed to deliver efficient current regulation and amplification, making it an ideal choice for a wide range of electronic applications. This small-signal transistor is characterized by its low VCE(sat) and high current gain, which ensures reliable operation even in demanding circuits.

Key Features

  • Dual PNP Transistor: The device contains two PNP transistors in a single package, allowing for compact circuit design and simplified assembly processes.
  • High Current Gain (hFE): With a high current gain, this transistor can control a larger output current with a smaller input current, improving the overall efficiency of the circuit.
  • Low Collector-Emitter Saturation Voltage: The low VCE(sat) minimizes power loss and heat generation, contributing to the longevity and reliability of the device.
  • Surface-Mount Package: The MMDT5401-7 comes in a SOT-363 package, which is suitable for automated assembly processes and helps to save valuable board space.
  • Lead-Free and RoHS Compliant: The product is environmentally friendly, complying with current RoHS directives, and is free from lead and other hazardous substances.

Applications

The versatility of the MMDT5401-7 allows it to be used in a variety of applications, including but not limited to:

  • Power Management Circuits
  • Signal Processing
  • Audio Amplifiers
  • Switching and Linear Amplification
  • Driver Stages in Hi-Fi Amplifiers and TV Circuits

Specifications

Parameter Value
Configuration Dual PNP
Collector-Base Voltage (VCBO) -150V
Collector-Emitter Voltage (VCEO) -150V
Emitter-Base Voltage (VEBO) -5V
Collector Current (IC) -200mA
Power Dissipation (PD) 300mW
Operating Temperature Range -55°C to +150°C

With its robust performance and compact form factor, the MMDT5401-7 is a reliable choice for designers looking to optimize their electronic designs with a dual PNP transistor solution.

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