The 2SD2079 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for switching and amplifier applications requiring high voltage and high current capabilities. It is often used in power supplies, motor control, and general-purpose switching circuits.

Applications:

• Switching Regulators
• DC-DC Converters
• Motor Drivers
• Power Amplifiers
• General Purpose Switching

Features:

• High Collector Current: IC = 5A (Maximum)
• High Collector-Emitter Voltage: VCEO = 400V
• Low Saturation Voltage: VCE(sat) = 1.5V (Maximum) at IC = 3A
• Fast Switching Speed
• High Power Dissipation

Benefits:

• Efficient switching and amplification in high-voltage circuits
• Reduced power loss and heat generation
• Improved reliability and stability
• Suitable for demanding industrial applications

Additional Details:

Absolute Maximum Ratings:

• Collector-Base Voltage (VCBO): 400V
• Collector-Emitter Voltage (VCEO): 400V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 5A
• Base Current (IB): 1A
• Collector Power Dissipation (PC): 40W (Ta=25°C)
• Junction Temperature (Tj): 150°C
• Storage Temperature (Tstg): -55°C to +150°C

Electrical Characteristics (at Ta=25°C):

• Collector Cutoff Current (ICBO): 1 μA (Maximum) at VCB=400V
• Emitter Cutoff Current (IEBO): 1 μA (Maximum) at VEB=6V
• DC Current Gain (hFE): 10 to 40 at VCE=5V, IC=0.5A
• Collector-Emitter Saturation Voltage (VCE(sat)): 1.5V (Maximum) at IC=3A, IB=0.3A
• Transition Frequency (fT): 4 MHz (Typical)

The 2SD2079 is typically supplied in a TO-220 package. It is crucial to refer to the official Toshiba datasheet for accurate specifications and application guidelines.