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VN10LPSTZ

Part No VN10LPSTZ
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET VMOS N-CHAN TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Tape & Box (TB)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
Power Dissipation (Max) 625mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package E-Line (TO-92 compatible)
Package / Case E-Line-3, Formed Leads
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 750615-VN10LPSTZ
Ultra Librarian 3D Model Ultra Librarian VN10LPSTZ CAD Model

Description

Introducing the VN10LPSTZ N-Channel Enhancement Mode MOSFET from Diodes Incorporated

The VN10LPSTZ is a high-performance, N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This MOSFET is a testament to the company's commitment to providing energy-efficient and reliable solutions for a wide range of electronic applications.

Constructed with advanced trench technology, the VN10LPSTZ boasts a low on-resistance (R<sub>DS(on)) which ensures minimal power loss and heat generation, making it an ideal choice for power management tasks. The device operates at a continuous drain current (I<sub>D) of 540 mA, which allows for a robust current flow while maintaining a compact and efficient design.

One of the key features of the VN10LPSTZ is its low threshold voltage (V<sub>GS(th)), which enables the MOSFET to be easily driven at low gate voltages, enhancing its compatibility with low-voltage logic level circuits and microcontroller interfaces. This feature is particularly useful in portable electronics where battery life is crucial.

The VN10LPSTZ is housed in a small SOT-23 package, which not only saves valuable board space but also enables high-density mounting, a necessity for modern miniaturized electronic devices. Despite its small size, the MOSFET does not compromise on performance, with a breakdown voltage (V<sub>DSS) of 100V providing a generous safety margin for most low to medium voltage applications.

Additionally, the VN10LPSTZ is characterized by fast switching speeds, which is essential for high-efficiency power conversion and regulation. This feature, coupled with its low intrinsic capacitance, makes the VN10LPSTZ an excellent choice for high-speed switching applications such as DC-DC converters, motor drives, and power supply circuits.

Diodes Incorporated has ensured that the VN10LPSTZ meets the highest quality and reliability standards. The MOSFET is RoHS compliant, reflecting the company's commitment to environmental sustainability. Whether you're designing power management systems, consumer electronics, or industrial automation equipment, the VN10LPSTZ offers a versatile and reliable solution for your N-Channel MOSFET needs.

With its combination of low power consumption, high efficiency, and compact form factor, the VN10LPSTZ from Diodes Incorporated is an excellent choice for designers looking to optimize their electronic designs for both performance and space.

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