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ZVN3310FTA

Part No ZVN3310FTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V .1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.4V @ 1mA
Max Input Capacitance 40pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 036836-ZVN3310FTA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZVN3310FTA CAD Model

Description

Introducing the ZVN3310FTA MOSFET by Diodes Incorporated

The ZVN3310FTA is a high-performance N-channel enhancement mode Field-Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This compact and efficient MOSFET is part of Diodes Incorporated's extensive range of power management devices, tailored to meet the needs of modern electronic applications.

With its SOT-23 package, the ZVN3310FTA offers a space-saving solution for PCB designs, making it an ideal choice for space-constrained applications. The device features a 100V drain-source breakdown voltage (BVDSS), which ensures reliable operation even under high voltage conditions. This characteristic makes the ZVN3310FTA suitable for a variety of power applications, including power supply circuits, motor control systems, and other high-voltage switching applications.

The ZVN3310FTA boasts a low on-resistance (RDS(on)) of just 3.5Ω at VGS=10V, providing improved efficiency and reduced power losses during operation. This low on-resistance, combined with a maximum continuous drain current (ID) of 240mA, allows the device to handle significant power levels, making it a robust choice for demanding environments.

Additionally, the ZVN3310FTA features fast switching speeds, which are essential for applications requiring high-speed operation. The fast switching characteristics help to minimize energy loss during the transition periods of switching events, contributing to the overall efficiency of the system.

This MOSFET is also characterized by its low threshold voltage (VGS(th)), typically around 1.0V, which allows it to be driven by low-voltage control signals. This is particularly advantageous in low-power and battery-operated devices where power conservation is crucial.

Diodes Incorporated has designed the ZVN3310FTA with reliability in mind. It is compliant with RoHS and Green Device standards, ensuring that it meets the latest environmental regulations. Whether you're designing power management systems, consumer electronics, or industrial controls, the ZVN3310FTA offers a combination of performance, efficiency, and reliability that engineers and designers can trust.

For detailed specifications and application notes, or to request samples, please visit the Diodes Incorporated website or contact your local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1415 $50.2325
755+ $0.1326 $100.1130
1,175+ $0.1281 $150.5175
1,680+ $0.1192 $200.2560
2,180+ $0.1147 $250.0460
2,725+ $0.1102 $300.2950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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