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ZVN4206GVTC

Part No ZVN4206GVTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 1A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Input Capacitance 100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 1 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1120306-ZVN4206GVTC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN4206GVTC CAD Model

Description

The ZVN4206GVTC from Diodes Incorporated is a robust N-channel enhancement mode vertical DMOS FET designed for high-performance switching applications. This product is a testament to Diodes Incorporated's commitment to providing industry-leading semiconductor solutions that meet the evolving needs of modern electronics.

Key Features

  • High Current Capability: The ZVN4206GVTC boasts a high continuous drain current (Id) rating, making it suitable for applications that require significant power handling.
  • Low On-Resistance: With its low RDS(on), this device ensures efficient operation with minimal power loss, which is critical for energy-sensitive designs.
  • High-Speed Switching: The fast switching speed of the ZVN4206GVTC makes it ideal for high-frequency applications, providing swift response times and improved performance.
  • Enhancement Mode: As an enhancement mode MOSFET, it requires a positive gate voltage to conduct, offering a level of control that is desirable in many circuit designs.
  • Temperature Resilience: The device can operate over a wide temperature range, ensuring reliability and consistent performance under varying environmental conditions.

Applications

The versatility of the ZVN4206GVTC allows it to be used across a wide range of applications, including:

  • Solenoid and relay drivers
  • DC-DC converters
  • Motor control circuits
  • Power management functions
  • Load switching

Package and Quality

The ZVN4206GVTC comes in a TO-252 package, which is known for its compact footprint and excellent thermal performance, making it suitable for space-constrained applications. Diodes Incorporated ensures that this product meets stringent quality standards and provides reliable and consistent performance for critical applications.

Conclusion

In summary, the ZVN4206GVTC from Diodes Incorporated is an exceptional choice for designers looking for a high-quality, high-performance N-channel MOSFET. Its combination of high current capability, low on-resistance, high-speed switching, and temperature resilience makes it a versatile component for a multitude of electronic applications.

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