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ZXM64P035GTA

Part No ZXM64P035GTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 35V 3.8A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 35V
Continuous Drain Current at 25°C 3.8A (Ta), 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 825pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 75 mOhm @ 2.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 102009-ZXM64P035GTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXM64P035GTA CAD Model

Description

Introducing the ZXM64P035GTA - A Robust MOSFET from Diodes Incorporated

The ZXM64P035GTA is a high-performance, N-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and conversion for a wide range of applications, making it an ideal choice for designers looking to optimize their electronic circuits.

Key Features of the ZXM64P035GTA:

  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)) of just 35mΩ, which means it can handle high currents with minimal power loss, enhancing the overall efficiency of the application it is used in.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of up to 64A, this MOSFET can support demanding power requirements, making it suitable for high-power density applications.
  • Advanced Packaging: The ZXM64P035GTA is housed in a compact SOT-223 package, which not only saves valuable board space but also ensures good thermal performance and mechanical robustness.
  • Fast Switching: The device is designed for fast switching, which reduces transition losses and improves the performance in switching applications such as DC-DC converters, motor drives, and power supplies.
  • Gate Charge Optimized: The MOSFET's optimized gate charge (Q<sub>G) enables efficient switching at high frequencies, which is crucial for applications that require fast switching capabilities.

Applications:

The versatility of the ZXM64P035GTA allows it to be employed in various applications, including but not limited to:

  • Power management solutions
  • DC-DC converters
  • Motor control circuits
  • Power supplies for servers, PCs, and telecom equipment
  • Battery management systems

With its high current handling capability, low on-resistance, and fast switching speeds, the ZXM64P035GTA from Diodes Incorporated stands out as a superior choice for engineers and designers who demand the best performance for their power management and conversion needs. Whether you're working on consumer electronics or industrial power systems, this MOSFET is engineered to provide reliable and efficient operation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9656 $57.9360
150+ $0.7923 $118.8450
230+ $0.7676 $176.5480
315+ $0.7428 $233.9820
405+ $0.7181 $290.8305
540+ $0.6438 $347.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,100 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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