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ZXMN10A08E6TA

Part No ZXMN10A08E6TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.5A SOT-23-6 / Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 7.7nC @ 10V
Max Input Capacitance 405pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 250 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Dimension SOT-23-6
Win Source Part Number 036947-ZXMN10A08E6TA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name ZXMN10A08E6
Introduction Date April 02, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian ZXMN10A08E6TA CAD Model

Description

Introducing the ZXMN10A08E6TA MOSFET by Diodes Incorporated

The ZXMN10A08E6TA is a high-performance, N-Channel enhancement mode Field-Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power control and switching in a wide array of electronic applications. It is housed in a compact E-Line (TO-92 compatible) package, making it suitable for space-constrained applications.

Key Features

  • Low On-Resistance: With a low on-resistance of just 0.055 ohms, the ZXMN10A08E6TA ensures minimal power loss and improves overall efficiency, which is crucial for power-sensitive designs.
  • High Continuous Drain Current: This device supports a high continuous drain current (Id) of up to 4.2A, making it capable of handling high-current applications with ease.
  • High Power Dissipation: With a power dissipation of 1.2W, this MOSFET can endure higher power levels, thus offering reliable performance in demanding situations.
  • Enhancement Mode: As an enhancement-mode FET, it requires a positive gate voltage to turn on, providing a natural state of off for safety in power applications.

Applications

The ZXMN10A08E6TA is versatile and can be used in a variety of applications, including but not limited to:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Motor Control Systems
  • High-Efficiency Power Supplies

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The ZXMN10A08E6TA MOSFET is no exception and is built to meet rigorous industry standards for performance and reliability. It is RoHS compliant, ensuring that it meets environmental standards by avoiding the use of hazardous substances.

Conclusion

Whether you're designing for consumer electronics, industrial automation, or automotive applications, the ZXMN10A08E6TA from Diodes Incorporated offers the performance and reliability needed to create efficient and durable designs. Its combination of low on-resistance, high current capability, and compact form factor make it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 119,690 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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