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ZXMN4A06GTA

Part No ZXMN4A06GTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 5A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 18.2nC @ 10V
Max Input Capacitance 770pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 50 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 115827-ZXMN4A06GTA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN4A06GTA CAD Model

Description

Introducing the ZXMN4A06GTA MOSFET by Diodes Incorporated

The ZXMN4A06GTA is a high-performance, energy-efficient N-Channel enhancement mode Field Effect Transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to optimize power management and efficiency, making it an ideal choice for a wide range of electronic applications.

Constructed with state-of-the-art trench technology, the ZXMN4A06GTA offers low on-resistance and a high continuous drain current. This feature ensures minimal power loss and heat generation, which is essential for maintaining the reliability and longevity of electronic systems. The device is housed in a compact SOT-223 package, which not only saves valuable board space but also provides excellent thermal performance.

The ZXMN4A06GTA operates at a maximum junction temperature of 150°C, providing a robust solution for high-temperature environments. With a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 4.5A at 25°C, this MOSFET can handle significant power levels, making it suitable for power supply circuits, motor control applications, and other power-intensive operations.

Key features of the ZXMN4A06GTA include:

  • Low threshold voltage (Vgs(th)) for ease of drive
  • Fast switching speed to improve efficiency in high-frequency applications
  • Low gate charge (Qg) which reduces the power needed to control the MOSFET, thus conserving energy
  • High avalanche energy rating, which provides robustness against unexpected voltage spikes

Whether you're developing power management systems, DC-DC converters, or any other application that demands high efficiency and reliability, the ZXMN4A06GTA from Diodes Incorporated is a component that can help you achieve your design goals. Its combination of low on-resistance, high-speed switching, and thermal efficiency makes it a versatile and crucial part of modern electronics design.

Choose the ZXMN4A06GTA for your next project and experience the performance and quality that Diodes Incorporated has to offer.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5243 $52.4300
205+ $0.4911 $100.6755
320+ $0.4745 $151.8400
455+ $0.4413 $200.7915
590+ $0.4247 $250.5730
740+ $0.4081 $301.9940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,343 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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