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ZXMN6A09KQTC

Part No ZXMN6A09KQTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 41V 60V TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 11.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1426pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 10.1W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 7.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1120402-ZXMN6A09KQTC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMN6A09KQTC CAD Model

Description

The ZXMN6A09KQTC is a high-performance, energy-efficient N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated. This power MOSFET is a testament to Diodes Incorporated's commitment to providing advanced power management solutions for a wide range of electronic applications.

With its compact and surface-mountable DFN2020-6 (Type C) package, the ZXMN6A09KQTC offers a space-saving solution for modern electronic designs. This makes it an ideal choice for applications where board space is at a premium, without compromising on performance.

Key Features:

  • Low On-Resistance: The ZXMN6A09KQTC boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates into reduced conduction losses and improved overall efficiency in applications such as power supply circuits, DC-DC converters, and motor control systems.
  • High Continuous Drain Current: It is capable of supporting a high continuous drain current (I<sub>D), making it suitable for high-power applications that require robust current handling capabilities.
  • Low Threshold Voltage: The device features a low threshold voltage (V<sub>GS(th)), ensuring that it can be easily driven by low-voltage logic signals, which is beneficial for battery-operated devices and low-power applications.
  • Fast Switching Speed: The fast switching characteristics of the ZXMN6A09KQTC contribute to reduced switching losses, which is critical for applications that operate at high frequencies.
  • Thermal Management: Enhanced thermal performance is achieved through the power DFN2020-6 (Type C) package, which also aids in improved reliability and longevity of the device.

Applications:

  • Power Management
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control Circuits
  • Load Switches
  • Computing and Networking Equipment

In conclusion, the ZXMN6A09KQTC from Diodes Incorporated is a versatile and efficient solution for designers looking to optimize power management in their electronic systems. Its compact form factor, combined with its high-performance attributes, makes it a valuable component in both commercial and industrial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0105 $60.6300
140+ $0.8292 $116.0880
220+ $0.8033 $176.7260
300+ $0.7773 $233.1900
385+ $0.7514 $289.2890
515+ $0.6738 $347.0070
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,300 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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