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ZXMN6A11DN8TC

Part No ZXMN6A11DN8TC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 2.5A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.5A
Maximum Rds On at Id,Vgs 120 mOhm @ 2.5A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 5.7nC @ 10V
Max Input Capacitance 330pF @ 40V
Maximum Power Dissipation 1.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 044174-ZXMN6A11DN8TC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN6A11DN8TC CAD Model

Description

Introducing the ZXMN6A11DN8TC MOSFET from Diodes Incorporated

The ZXMN6A11DN8TC is a cutting-edge, dual N-channel enhancement mode MOSFET brought to the market by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This product is designed to provide high-efficiency power management solutions for a wide range of applications.

Key Features

  • Low On-Resistance: The ZXMN6A11DN8TC boasts an exceptionally low on-resistance, which translates to reduced power loss and improved overall efficiency in electronic circuits.
  • High Continuous Drain Current: With the capability to handle a high continuous drain current, this MOSFET is suitable for demanding applications that require robust current handling.
  • Thermal Management: The device is encapsulated in a compact and thermally efficient package, ensuring optimal heat dissipation for reliable operation even under high power conditions.
  • Dual MOSFET Configuration: Its dual N-channel configuration allows for flexibility in design, enabling the creation of more compact and efficient circuit layouts.

Applications

The ZXMN6A11DN8TC is ideal for a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Load switching
  • High-speed switching applications

Product Specifications

The ZXMN6A11DN8TC features the following specifications:

  • Package: 8-Pin SOIC
  • V<sub>DS: 60V, offering a broad operating voltage range suitable for various electronic designs.
  • I<sub>D: 5.7A, providing ample current for high-power applications.
  • R<sub>DS(on): As low as 45 mΩ at V<sub>GS = 10V, ensuring high efficiency and low voltage drop across the device.

Reliability and Quality

Diodes Incorporated is known for its commitment to quality and reliability. The ZXMN6A11DN8TC is no exception, undergoing rigorous testing to ensure it meets the high standards expected by industry professionals. This MOSFET is RoHS compliant, adhering to environmental standards and ensuring suitability for use in a wide range of consumer and industrial products.

Whether you are designing power management systems, motor controllers, or any application that demands high-efficiency switching, the ZXMN6A11DN8TC from Diodes Incorporated is an excellent choice that combines performance, efficiency, and reliability.

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