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ZXMP4A57E6TA

Part No ZXMP4A57E6TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 2.9A SOT26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 15.8nC @ 10V
Max Input Capacitance 833pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 80 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Dimension SOT-23-6
Win Source Part Number 044176-ZXMP4A57E6TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMP4A57E6TA CAD Model

Description

Introducing the ZXMP4A57E6TA P-Channel MOSFET from Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the ZXMP4A57E6TA, a high-performance P-Channel MOSFET designed to deliver efficiency and reliability for a wide range of applications. This MOSFET is a testament to Diodes Incorporated's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

The ZXMP4A57E6TA is built using advanced trench technology, which enables it to offer low on-resistance and a high threshold voltage. This makes it an ideal choice for power management tasks, particularly in space-constrained environments where efficiency is paramount. The device is housed in a compact E6 package, which not only saves valuable board space but also ensures a low thermal footprint.

With a continuous drain current of up to -4A and a -30V drain-source breakdown voltage, the ZXMP4A57E6TA is capable of handling significant power levels, making it suitable for a variety of applications, including load switching, power conversion, and motor control circuits. Its fast switching speeds contribute to reduced switching losses, further enhancing its efficiency in high-frequency operations.

Moreover, the ZXMP4A57E6TA features a -1.2V gate-source threshold voltage, which allows for low-voltage drive capability. This characteristic is particularly beneficial in battery-powered devices, where power conservation is critical. The MOSFET also includes built-in gate-source ESD protection, providing robustness against electrostatic discharges during handling and operation.

Engineers and designers will appreciate the ZXMP4A57E6TA's versatility and performance in their circuit designs. Whether it's for power supply control, battery management, or any application requiring a high-efficiency P-Channel MOSFET, the ZXMP4A57E6TA stands out as a reliable and cost-effective choice.

Diodes Incorporated ensures that the ZXMP4A57E6TA meets the highest quality standards, offering both performance and peace of mind for your electronic designs. Choose the ZXMP4A57E6TA for your next project and experience the difference that a well-engineered P-Channel MOSFET can make.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3810 $51.4350
320+ $0.3127 $100.0640
500+ $0.3029 $151.4500
685+ $0.2931 $200.7735
885+ $0.2834 $250.8090
1,185+ $0.2540 $300.9900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,885 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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