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ZXMP6A13F

Part No ZXMP6A13F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 0.9A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 5.9nC @ 10V
Max Input Capacitance 219pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 400 mOhm @ 900mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 413984-ZXMP6A13F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZXMP6A13F CAD Model

Description

Diodes Incorporated ZXMP6A13F P-Channel MOSFET

The ZXMP6A13F is a high-performance P-Channel MOSFET from Diodes Incorporated, designed to offer efficient power management and switching with low on-resistance and a small footprint. This MOSFET is an ideal choice for a variety of applications, from power supply to load switching, and it is especially well-suited for portable and battery-powered devices due to its low power consumption and compact size.

The device is built using a robust and reliable MOSFET technology that ensures stability and longevity. It features a -60V drain-source breakdown voltage (V<sub>DS), which provides a good margin for applications with high voltage requirements. The continuous drain current (I<sub>D) of -1.8A allows for handling of significant power, while the power dissipation (P<sub>D) of 1.25W ensures that the device can withstand moderate thermal stresses during operation.

One of the key benefits of the ZXMP6A13F MOSFET is its low on-resistance (R<sub>DS(on)), which is typically just 160mΩ at a V<sub>GS of -4.5V. This low on-resistance minimizes power loss due to heating, thereby enhancing the overall efficiency of the system in which it is used. Additionally, the MOSFET operates with a gate-source threshold voltage (V<sub>GS(th)) in the range of -1.0V to -2.5V, making it compatible with low-voltage logic signals and easy to drive with standard control ICs.

The ZXMP6A13F comes in a compact SOT-23 package, which is highly valued in space-constrained applications. The small size of the package does not compromise its thermal performance, thanks to its excellent power dissipation capabilities. This makes it an excellent choice for high-density circuit designs where space is at a premium.

In summary, the ZXMP6A13F from Diodes Incorporated is a versatile and efficient solution for a wide range of power management tasks. Its combination of low on-resistance, high voltage threshold, and small package size make it a compelling choice for designers looking to optimize their power circuits for both performance and space.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3622 $60.5196
42+ $2.7593 $115.8906
65+ $2.6727 $173.7255
90+ $2.5860 $232.7400
116+ $2.5006 $290.0696
155+ $2.2419 $347.4945
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Availability: 30,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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