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ZXMP7A17GTA

Part No ZXMP7A17GTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 70V 3.7A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 70V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 635pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 160 mOhm @ 2.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 044178-ZXMP7A17GTA
Family Name ZXMP7A17G
Introduction Date March 21, 2006
ECCN EAR99
Country of Origin China, Germany
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian ZXMP7A17GTA CAD Model

Description

The ZXMP7A17GTA from Diodes Incorporated is a high-performance P-Channel MOSFET that offers efficient power management for a wide range of applications. This MOSFET is designed to handle continuous drain currents up to 6.7A, making it a suitable choice for power-intensive tasks. With its low on-resistance of just 70mΩ at VGS = -10V, the ZXMP7A17GTA ensures minimal power loss during operation, which is critical for maintaining energy efficiency in electronic circuits.

The device is housed in a compact SOT-223 package, which is ideal for space-constrained applications. Despite its small size, the ZXMP7A17GTA does not compromise on performance. It operates over a wide range of gate-source voltages, from -1.8V to -20V, providing flexibility in various circuit designs. This MOSFET is also characterized by a low threshold voltage, making it easy to drive and suitable for low voltage applications.

Furthermore, the ZXMP7A17GTA features fast switching speeds, which is a critical attribute for applications that require rapid power modulation, such as DC-DC converters, power supplies, and motor control circuits. The device's robust thermal performance is ensured by its maximum junction temperature of 150°C, allowing it to maintain stability and reliability even under high temperature operating conditions.

One of the key advantages of the ZXMP7A17GTA is its built-in protection features. It includes integrated gate-source ESD protection, which guards against electrostatic discharge events, potentially extending the lifespan of the product. Additionally, the MOSFET's body diode provides inherent reverse current protection, which is particularly useful in inductive load applications.

Overall, the ZXMP7A17GTA is an excellent choice for designers looking for a P-Channel MOSFET that offers a balance between compactness and high performance. With its strong electrical characteristics and protective features, this MOSFET from Diodes Incorporated is well-suited for a variety of power management tasks in both commercial and industrial electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,925 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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