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ZXTP2012ZQTA

Part No ZXTP2012ZQTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 4.3A SOT89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 4.3 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 215mV @ 500mA, 5A
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 1V
Power - Max 1.5 W
Frequency - Transition 120MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89-3
Base Product Number ZXTP2012
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 904414-ZXTP2012ZQTA
Ultra Librarian 3D Model Ultra Librarian ZXTP2012ZQTA CAD Model

Description

Diodes Incorporated ZXTP2012ZQTA - High-Performance PNP Transistor

The ZXTP2012ZQTA from Diodes Incorporated is a high-performance PNP transistor designed for use in a wide range of electronic applications. This robust semiconductor device is part of the ZXTP series, known for their reliability and efficiency. It is housed in a compact SOT-89 package, which is ideal for space-constrained applications while ensuring good heat dissipation.

This PNP transistor offers a continuous collector current of up to 5 A, making it suitable for high-power switching and amplification tasks. With a collector-emitter voltage (VCEO) of -20 V, it can handle moderate voltage applications with ease. The ZXTP2012ZQTA also boasts a low saturation voltage, which ensures lower power dissipation during operation and contributes to the overall energy efficiency of the circuit.

The device features a high gain bandwidth product (fT) of 100 MHz, indicating its ability to operate effectively at high frequencies. This characteristic makes the ZXTP2012ZQTA an excellent choice for applications in the audio frequency domain, as well as in RF circuits where high-speed signal processing is required.

One of the key advantages of the ZXTP2012ZQTA is its high power dissipation capability of up to 2 W. This allows the transistor to handle higher power levels without the risk of overheating, thus improving the longevity and reliability of the device. Additionally, the transistor has a low collector capacitance, which minimizes the effects of Miller capacitance and improves the overall frequency response of the circuit.

Diodes Incorporated has designed the ZXTP2012ZQTA with a focus on quality and performance. It is RoHS compliant, reflecting the company's commitment to environmental sustainability. The ZXTP2012ZQTA is suitable for a variety of applications, including but not limited to, power management, load switching, and signal amplification in commercial, industrial, and telecommunication devices.

Overall, the ZXTP2012ZQTA is a versatile and efficient PNP transistor that offers designers a combination of high current handling, low voltage operation, and high-frequency performance, all packed into a small footprint package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4662 $51.3170
85+ $1.2031 $102.2635
130+ $1.1655 $151.5150
180+ $1.1279 $203.0220
230+ $1.0903 $250.7690
310+ $0.9775 $303.0250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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