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ZXTP2013GTA

Part No ZXTP2013GTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 5A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 340mV @ 400mA, 4A
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 1A, 1V
Maximum Power Dissipation 3W
Frequency - Transition 125MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 057891-ZXTP2013GTA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXTP2013GTA CAD Model

Description

Introducing the ZXTP2013GTA Transistor from Diodes Incorporated

The ZXTP2013GTA is a high-performance PNP transistor designed by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This transistor is part of their extensive range of bipolar transistors, which are known for their reliability and efficiency. The ZXTP2013GTA is crafted to meet the needs of modern electronic applications, offering a blend of power and precision that is ideal for a wide array of uses.

Key Features and Benefits

  • High Current Capability: The ZXTP2013GTA can handle continuous collector currents up to 5A, making it suitable for high-power applications.
  • Low Saturation Voltage: It has a low collector-emitter saturation voltage of typically 160mV at 1A, which enhances efficiency by minimizing power loss during operation.
  • High Power Dissipation: With a power dissipation of 1.2W, this transistor can withstand significant energy without compromising performance.
  • Wide Operating Temperature Range: The device can operate effectively over a broad temperature range from -55°C to +150°C, ensuring stability in various environments.

Applications

The ZXTP2013GTA is versatile and can be used in a variety of applications, including:

  • Power management circuits
  • Load switches
  • Signal processing
  • Amplification stages
  • Linear regulators

Package and Quality

The ZXTP2013GTA comes in a compact SOT223 package, which is not only space-efficient but also offers excellent thermal performance for better reliability. Furthermore, Diodes Incorporated ensures that this product meets stringent quality standards, providing a robust solution that engineers and designers can rely on for their critical circuit designs.

In summary, the ZXTP2013GTA PNP transistor is a testament to Diodes Incorporated's commitment to providing high-quality components that push the boundaries of performance and efficiency. Whether you're designing power circuits, working on signal amplification, or developing linear regulators, the ZXTP2013GTA is an excellent choice that promises to deliver top-notch results.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2042 $50.0290
600+ $0.1676 $100.5600
925+ $0.1624 $150.2200
1,275+ $0.1571 $200.3025
1,650+ $0.1519 $250.6350
2,205+ $0.1362 $300.3210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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