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ZXTP2014ZTA

Part No ZXTP2014ZTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 140V 3A SOT89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 140V
Max Vce (sat) 330mV @ 300mA, 3A
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 1A, 5V
Maximum Power Dissipation 2.1W
Frequency - Transition 120MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 057892-ZXTP2014ZTA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZXTP2014ZTA CAD Model

Description

Introducing the ZXTP2014ZTA from Diodes Incorporated

The ZXTP2014ZTA is a high-performance PNP transistor designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is engineered to deliver superior efficiency and reliability for a wide range of applications. With its compact SOT-89 package, the ZXTP2014ZTA offers a space-saving solution for your circuit designs, making it an ideal choice for space-constrained applications.

At the heart of the ZXTP2014ZTA lies its robust electrical characteristics. It boasts a collector-emitter voltage (VCEO) of -30V and a collector current (IC) of up to -4A, which makes it suitable for medium-power applications. The device also features a high current gain (hFE) with a typical value of 300 at a collector current of -1A, ensuring efficient operation even at lower currents. This high gain performance ensures that the transistor can be driven with a minimal base current, thus conserving energy and improving overall system efficiency.

The ZXTP2014ZTA is designed with a continuous collector power dissipation (PC) of 3W, which enables it to handle significant power levels while maintaining a low thermal footprint. The device's thermal characteristics are further enhanced by its low saturation voltage, reducing power losses and improving thermal efficiency during operation.

One of the key advantages of the ZXTP2014ZTA is its fast switching speed. This feature is critical for applications that require rapid transitions, such as switching regulators, power management circuits, and amplification stages in audio systems. The fast switching capability ensures that the transistor can respond quickly to control signals, resulting in precise control and high-performance operation.

With its robust performance and compact size, the ZXTP2014ZTA is an excellent choice for designers looking to optimize their power management solutions. Whether you're working on power amplifiers, DC-DC converters, or any application that demands a reliable PNP transistor with medium power handling capabilities, the ZXTP2014ZTA from Diodes Incorporated is a component that won't disappoint.

For detailed specifications and application support, visit the Diodes Incorporated website or contact their technical support team for personalized assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3883 $50.4790
315+ $0.3187 $100.3905
490+ $0.3087 $151.2630
670+ $0.2987 $200.1290
870+ $0.2888 $251.2560
1,160+ $0.2589 $300.3240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,700 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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