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MMDT5214W

Part No MMDT5214W
Manufacturer DIOTEC Electronics Corporation
Catalog Transistors (BJT) - Single, Pre - Biased
Description DIGITAL TR SOT-323 50V 100MA / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SOT-323
Sample
Rohs State rohs
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Diotec Semiconductor
Package Strip
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Other Names 2721-MMDT5214W
Standard Package 30
Win Source Part Number 1079531-MMDT5214W
Ultra Librarian 3D Model Ultra Librarian MMDT5214W CAD Model

Description

The MMDT5214W is an NPN pre-biased transistor from Diotec Semiconductor, designed for use in discrete semiconductor products.

  • Power: 200mW
  • Voltage Collector Emitter Breakdown: 50V
  • Maximum Collector Current: 100mA
  • DC Current Gain (hFE): 80 @ 10mA and 5V
  • Frequency Transition: 250 MHz
  • Package/Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Alternative parts (cross-reference): Not specified
  • Resistor-Base (R1): 10 kOhms
  • Resistor-Emitter Base (R2): 47 kOhms
  • Packaging: Strip
  • Standard Package: 30

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