The FAN8272 is a monolithic dual channel high-side gate driver IC designed for driving N-channel MOSFETs or IGBTs in high-side configurations. It is manufactured by Fairchild/ON Semiconductor. This driver IC is commonly used in applications that require driving inductive loads, such as motors and solenoids.

Applications:

• Motor Control: Used in Brushless DC (BLDC) motor control systems and other motor drive applications.
• Solenoid Drivers: Employed in solenoid control for automotive and industrial applications.
• Power Distribution: Used in high-side switching for power distribution systems.
• Automotive Electronics: Found in automotive applications such as fuel injection and transmission control.
• Industrial Automation: Employed in industrial equipment for driving inductive loads.

Features:

• Dual Channel High-Side Gate Driver: Provides two independent high-side gate drivers.
• Charge Pump for High-Side Drive: Integrated charge pump enables driving N-channel MOSFETs in high-side configurations.
• Bootstrap Diode Integrated: Simplifies the external component count by integrating the bootstrap diode.
• Undervoltage Lockout (UVLO): Protects the MOSFETs by disabling the gate drive outputs when the supply voltage is too low.
• Overcurrent Protection (OCP): Provides overcurrent protection to prevent damage to the MOSFETs and the load.
• Shoot-Through Protection: Prevents simultaneous conduction of both high-side and low-side MOSFETs in half-bridge configurations.
• Enable Input: Allows for external control of the gate driver outputs.

Benefits:

• Simplified Design: Integrated features reduce the external component count and simplify the design process.
• Enhanced Protection: Overcurrent and undervoltage protection features ensure reliable operation and prevent damage.
• High Efficiency: Efficient gate driving minimizes power losses and improves overall system efficiency.
• Versatile: Suitable for a wide range of applications requiring high-side switching.
• Cost-Effective: Provides a cost-effective solution for driving N-channel MOSFETs in high-side configurations.

Technical Specifications:

• Supply Voltage: Typically 8V to 18V
• Gate Drive Voltage: Typically VCC
• Operating Temperature: -40°C to +125°C
• Output Current: Determined by the external MOSFETs or IGBTs.
• Switching Frequency: Up to the specified maximum frequency in the datasheet.
• Package: SOIC or other surface-mount packages.
• UVLO Threshold: Specified threshold for undervoltage lockout.