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Same model may have multiple batches, images only for reference.
FCH47N60_F085 Real Image
Same model may have multiple batches, images only for reference.

FCH47N60_F085

Part No FCH47N60_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 47A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 250nC @ 10V
Max Input Capacitance 8000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 417W (Tc)
Maximum Rds On at Id,Vgs 79 mOhm @ 47A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 1037881-FCH47N60_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FCH47N60_F085 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance N-channel power MOSFET that offers a drain-source breakdown voltage of 600V and a continuous drain current of 47A at 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 47A @ 25°C
  • Maximum Rds on at Id, Vgs: 79 mOhm @ 47A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 250nC @ 10V
  • Category: Discrete Semiconductor Products
  • Package: TO-247-3
  • Mounting Option: Through-Hole
  • Temperature Range: -55°C to 150°C (TJ)
  • Component Status: Active
  • Supply and Demand Status: Sufficient

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