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FCPF380N60F

Part No FCPF380N60F
Manufacturer Fairchild/ON Semiconductor
Catalog Miscellaneous
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Manufacturer Fairchild/ON Semiconductor
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 823188-FCPF380N60F
Ultra Librarian 3D Model Ultra Librarian FCPF380N60F CAD Model

Description

The FCPF380N60F is an N-Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor) designed for high voltage, high-speed switching applications. Utilizing advanced PowerTrench® MOSFET technology, it provides very low on-resistance (RDS(on)) and gate charge (Qg), minimizing conduction and switching losses in power conversion circuits. Its robust design ensures reliable performance in demanding environments.

Applications

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Uninterruptible power supplies (UPS)
  • High-voltage DC-DC converters
  • Lighting ballasts

Features

  • Low RDS(on): Reduces conduction losses, enhancing efficiency and minimizing heat dissipation.
  • Low gate charge (Qg): Minimizes switching losses, enabling higher frequency operation.
  • Avalanche rated: Provides robustness against voltage transients and inductive loads.
  • High ruggedness: Ensures reliable operation under harsh electrical conditions.
  • Fast switching speed: Facilitates efficient performance in high-frequency applications.

Benefits

  • Improved Efficiency: The low RDS(on) and Qg contribute to higher overall system efficiency, reducing energy consumption and heat generation.
  • Enhanced Thermal Performance: Lower power dissipation allows for smaller heat sinks or fanless operation.
  • Increased Reliability: The avalanche rating and ruggedness provide greater tolerance to voltage spikes and transients.
  • Simplified Design: Easy to drive and implement in various power conversion topologies.
  • Reduced System Cost: Optimized performance minimizes the need for complex control schemes and additional components.

Additional Details

The FCPF380N60F features a drain-source voltage (VDS) rating of 600V and a continuous drain current (ID) rating of 7.5A. It is available in a TO-220F package, which provides good thermal dissipation capabilities. The gate threshold voltage (VGS(th)) is typically around 3V. This MOSFET is well-suited for applications requiring high voltage operation and efficient power switching. The PowerTrench® MOSFET technology significantly improves the device's switching performance and reduces on-state resistance, enhancing overall system performance and reliability. Its fast switching speed also makes it suitable for high-frequency applications.

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