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Same model may have multiple batches, images only for reference.
FDA24N40F Real Image
Same model may have multiple batches, images only for reference.

FDA24N40F

Part No FDA24N40F
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 23A TO-3PN
Datasheet
FDA24N40F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 3030pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 235W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 11.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1037942-FDA24N40F
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FDA24N40F CAD Model

Description

The Fairchild/ON Semiconductor FDA24N40F is an N-channel MOSFET with a drain-source breakdown voltage of 400V and a maximum power dissipation of 235W (Tc).

  • Drain-Source Breakdown Voltage: 400V
  • Maximum Power Dissipation: 235W (Tc)
  • Maximum Rds On at Id, Vgs: 190 mOhm @ 11.5A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Input Capacitance: 3030pF @ 25V
  • Mounting Type: Through Hole
  • Package: TO-3PN
  • Supply and Demand Status: Sufficient
  • Package Quantity: 450

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0256 $52.3328
31+ $3.3030 $102.3930
47+ $3.1998 $150.3906
65+ $3.0966 $201.2790
84+ $2.9934 $251.4456
112+ $2.6837 $300.5744
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Availability: 30,000 pieces
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