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Same model may have multiple batches, images only for reference.
FDA62N28 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDA62N28

Part No FDA62N28
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 280V 62A TO-3P
Datasheet
FDA62N28 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 280V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 4630pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 51 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1037949-FDA62N28
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDA62N28 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a through-hole, N-channel polarity semiconductor with a maximum power dissipation of 500W (Tc).

  • Mounting Type: Through-Hole
  • Polarity: N-Channel
  • Maximum Power Dissipation: 500W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 280V
  • Continuous Drain Current at 25°C: 62A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Packaging: TO-3PN
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id,Vgs: 51 mOhm @ 31A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient

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