The FDB20AN06AO is an N-Channel enhancement mode PowerTrench® MOSFET from Fairchild Semiconductor/ON Semiconductor. It is designed for high power and efficiency in switching applications, featuring low on-resistance and gate charge for minimized power losses.

Applications

• Synchronous Rectification in AC/DC and DC/DC converters
• Motor Control
• Uninterruptible Power Supplies (UPS)
• DC-DC conversion
• Power Tools

Features

• Low on-resistance: RDS(on) = 0.008Ω (Typ.) @ VGS = 10V, ID = 20A
• High current capability: ID = 80A
• Low gate charge: Qg = 32nC (Typ.) @ VGS = 10V
• Avalanche energy tested
• 100% UIS Tested
• RoHS Compliant

Benefits

• Improved Efficiency: Low RDS(on) minimizes conduction losses, resulting in higher efficiency in power conversion.
• Reduced Switching Losses: Low gate charge enables faster switching and reduces switching losses.
• Enhanced Thermal Performance: The device can handle high currents while maintaining low temperatures.
• High Reliability: Robust design and manufacturing ensure long-term reliability.
• Simplified Design: Easy to implement and integrate into existing circuits.

Additional Details

The FDB20AN06AO is available in a TO-263 (D2PAK) package, which is suitable for surface mounting. The device is specifically engineered for applications that require high efficiency and power density. It has a drain-source voltage rating of 60V. Continuous drain current at VGS=10V is 20A, and pulsed drain current is 80A. The power dissipation is 110W.